Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode

Journal article

• Category: Original research article
• Title: Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode
• Authors:
  • Zarate-Galvez, Sarai (f, external)
  • Garcia-Barrientos, Abel (m, external)
  • Lastras-Martinez, Luis Felipe (m, external)
  • Cardenas-Juarez, Marco (m, external)
  • Macias-Velasquez, Sharon (f, external)
  • Filipovic, Lado (m, E360)
  • Arce-Casas, Armando (m, external)
• Journal: ECS Journal of Solid State Science and Technology
• Vol: 12
• Issue/Number (optional): 7
• Article Number(optional): 076014
• Start Page: 1
• End Page: 13
• Number of pages: 13
• DOI: 10.1149/2162-8777/ace7c4
• Date of Issue: 26/07/2023
• Language: English
• Keywords: light-emitting diode, InGaN, GaN, quantum efficiency, quantum drift diffusion model
• Open access: yes + CC BY 4.0
• Research projects (Name of related research projects including + funding IDs):
  • Christian Doppler Laboratory for Multi-Scale Process Modeling of Semiconductor Devices and Sensors
  • Austrian Science Fund (FWF): P33609-N
• TU Wien Core facilities: None
• Research areas -- Focal Areas and Fields: (pick from TU Wien Research Matrix's subcategories and assign a percentage share; in total it should add up to 100%.):
  • Modeling and Simulation (50%), Nanoelectronics (50%)
• Invited: no
• File attachments:
  • Paper as PDF: PAPER.PDF