[Duplicate] Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS2 FETs

Journal article

• Category (PICK ONE FROM LIST; DO NOT CHANGE OR ADD NEW CATEGORY!): < Original research article >
• Title: < Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS2 FETs >
• Authors:
  • < Ghosh, Rittik (m, E360) >
  • < Provias, Alexandros (m, E360) >
  • < Karl, Alexander (m, E360) >
  • < Wilhelmer, Christoph (m, E360) >
  • < Knobloch, Theresia (f, E360) >
  • < Davoudi, Mohammad Rasool (m, E360) >
  • < Sattari-Esfahlan, Seyed Mehdi (m, E360) >
  • < Waldhör, Dominic (m, E360) >
  • < Grasser, Tibor (m, E360) >
• Journal: < Microelectronic Engineering >
• Vol: < 299 >
• Issue/Number (optional): < >
• Article Number(optional): 112333
• Start Page: < 1 >
• End Page: < 5 >
• Number of pages: < 5 >
• DOI: < 10.1016/j.mee.2025.112333 >
• Date of Issue: < 08/03/2025 >
• Language: < English >
• Keywords: < 2D FETs, Hysteresis, CMOS, Reliability, Physics-based models >
• Open access: < Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/) >
• Research projects (TISS-Project-Acronyms ONLY: TISS->Research->My projects: pick from "Acronym" column (only project leaders can access this information)):
  • F2GO, TU-DX (see https://doi.org/10.55776/DOC142)
• TU Wien Core facilities: < None >
• Research areas -- Focal Areas and Fields: (pick from TU Wien Research Matrix's subcategories and assign a percentage share; in total it should add up to 100%.):
  • < Modeling and Simulation >
• Invited: < no >
• File attachments:
  • Paper as PDF: Elsevier_Microelectronics_engineering.pdf