Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

Journal article

• Category (PICK ONE FROM LIST; DO NOT CHANGE OR ADD NEW CATEGORY!): < Original research article >
• Title: < Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy >
• Authors:
  • <Shen, Yaqing (f, external)> -<Zhu, Kaichen (m, external)> -<Xiao, Yiping (m, external)> -<Waldhör, Dominic (m, E360)> -<Basher, Abdulrahman H. (m, external)> -<Knobloch, Theresia (f, E360)> -<Pazos, Sebastian (m, external)> -<Liang, Xianhu (m, external)> -<Zheng, Wenwen (f, external)> -<Yuan, Yue (f, external)> -<Roldan, Juan B. (m, external)> -<Schwingenschlögl, Udo (m, external)> -<Tian, He (m, external)> -<Wu, Huaqiang (m, external)> -<Schranghamer, Thomas F. (m, external)> -<Trainor, Nicholas (m, external)> -<Redwing, Joan M. (f, external)> -<Das, Saptarshi (m, external)> -<Grasser, Tibor (m, E360)> -<Lanza, Mario (m, external)>
• Journal: < Nature Electronics >
• Vol: < 7 >
• Issue/Number (optional): < >
• Article Number(optional): < >
• Start Page: < 856 >
• End Page: < 867 >
• Number of pages: < 12 >
• DOI: < doi.org/10.1038/s41928-024-01233-w >
• Date of Issue: < 26/08/2024 >
• Language: < English >
• Keywords: < Two-dimensional (2D) semiconductors, Field-effect transistors (FETs), Gate dielectrics, Hexagonal boron nitride (h-BN), Chemical vapor deposition (CVD), Native defects >
• Open access: No
• Research projects (TISS-Project-Acronyms ONLY: TISS->Research->My projects: pick from "Acronym" column (only project leaders can access this information)):
  • F2GO
• TU Wien Core facilities: < None >
• Research areas -- Focal Areas and Fields: (pick from TU Wien Research Matrix's subcategories and assign a percentage share; in total it should add up to 100%.):
  • < e.g.: Modeling and Simulation (50%), Nanoelectronics (50%) >
• Invited: < no >
• File attachments:
  • Paper as PDF: ** s41928-024-01233-w-1.pdf**
  • Proof of invitation as PDF: INVITATION.PDF