A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping [Duplicate]

Journal article

• Category (PICK ONE FROM LIST; DO NOT CHANGE OR ADD NEW CATEGORY!): Original research article
• Title: A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping
• Authors:
  • Bendra, Mario (m, E360)
  • de Orio, Roberto Lacerda (m, E360)
  • Selberherr, Siegfried (m, E360)
  • Goes, Wolfgang (m, external)
  • Sverdlov, Viktor (m, E360)
• Journal: Solid-State Electronics
• Vol: 223
• Article Number(optional): 109027
• Start Page: 109027-1
• End Page: 109027-6
• Number of pages: 6
• DOI: 10.1016/j.sse.2024.109027
• Date of Issue: 16/11/2024
• Language: English
• Keywords: Back-hopping, spin transfer torques, ultra-scaled MRAM cells, perpendicular magnetic anisotropy, writing error, multi-level cells
• Open access: yes + CC BY 4.0
• Research projects (TISS-Project-Acronyms ONLY: TISS->Research->My projects: pick from "Acronym" column (only project leaders can access this information)):
  • NovoMemLog
• TU Wien Core facilities: None
• Research areas -- Focal Areas and Fields: (pick from TU Wien Research Matrix's subcategories and assign a percentage share; in total it should add up to 100%.):
  • Modeling and Simulation (50%)
  • Nanoelectronics (50%)
• Invited: yes + proof via PDF attachment
• File attachments:
  • Paper as PDF: 1-s2.0-S003811012400176X-main.pdf
  • Proof of review as PDF: Decision_on_submission_to_Solid_State_Electronics.pdf
  • Proof of invitation as PDF: invitation__EUROSOI-ULIS_Special_Issue_in_Solid-State_Electronics.pdf