Simulation of Advanced MRAM Devices for sub-ns Switching

Talk or Poster (with paper)

• Category (PICK ONE FROM LIST; DO NOT CHANGE OR ADD NEW CATEGORY!): Full-paper Contribution
• Title: Simulation of Advanced MRAM Devices for sub-ns Switching
• Authors:
  • Pruckner, Bernhard (m, E360)
  • Jørstad, Nils Petter (m, E360)
  • Bendra, Mario (m, E360)
  • Hadámek, Tomáš (m, E360)
  • Goes, Wolfgang (m, external)
  • Selberherr, Siegfried (m, E360)
  • Sverdlov, Viktor (m, E360)
• Presenters:
  • Pruckner, Bernhard (m, E360)
• Conference: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
• Proceedings Title: Proceedings of the 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
• Proceedings Link: https://ieeexplore.ieee.org/xpl/conhome/10732027/proceeding
• Conference City: San Jose, CA
• Conference Country: USA
• Conference Dates: 24/09/2024 - 27/09/2024
• Conference Format: On-site
• Conference Website: Website
• Start Page: 1
• End Page: 4
• Number of pages: 4
• ISBN: 979-8-3315-1635-2
• DOI: 10.1109/SISPAD62626.2024.10733317
• Keywords: Spintronics, SOT-MRAM, STT-MRAM, Sub-ns Switching
• Open access: no
• Research projects (TISS-Project-Acronyms ONLY: TISS->Research->My projects: pick from "Acronym" column (only project leaders can access this information)):
  • NovoMemLog
• TU Wien Core facilities: None
• Research areas -- Focal Areas and Fields: (pick from TU Wien Research Matrix's subcategories and assign a percentage share; in total it should add up to 100%.):
  • Modeling and Simulation (50%), Nanoelectronics (50%)
• Invited: no
• Reviewed: yes + proof via PDF attachment:
• File attachments:
  • Paper as PDF: PAPER.PDF
  • Proof of review as PDF: REVIEW.PDF