Multi-Scale Modeling of Transistors Based on the 2D Semiconductor Bi2O2Se
Talk or Poster (with paper)
- Category (PICK ONE FROM LIST; DO NOT CHANGE OR ADD NEW CATEGORY!): < Full-paper Contribution >
- Title: < Multi-Scale Modeling of Transistors Based on the 2D Semiconductor Bi2O2Se >
- Authors:
- < Davoudi, Mohammad Rasool (m, E360) >
- < Khakbaz, Pedram (m, E360) >
- < Knobloch, Theresia (m, E360) >
- < Waldhoer, Dominic (m, E360) >
- < Liu, Changze (m, external) >
- < Nazir, Aftab (m, external) >
- < Zhang, Yichi (m, external) >
- < Peng, Hailin (m, external) >
- < Grasser, Tibor (m, E360) >
- Presenters:
- < Davoudi, Mohammad Rasool (m, E360) >
- Conference: < International Conference on Simulation of Semiconductor Processes and Devices >
- Proceedings Title: < Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices >
- Proceedings Link: < https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=10319515 >
- Conference City: < Kobe >
- Conference Country: < Japan >
- Conference Dates: < 27/09/2023 - End date 29/09/2023>
- Conference Format: < On-site >
- Conference Website: < https://sispad2023.jp/workshop/ >
- Start Page: < 49 >
- End Page: < 52 >
- Number of pages: < 4 >
- ISBN: < 979-8-3503-1368-0 >
- DOI: < 10.23919/SISPAD57422.2023.10319609 >
- Language: < English >
- Keywords: < Bi2O2Se, Bi2SeO5, defects, 2D materials, reliability, TCAD, DFT, FET, MOSFET >
- Open access: < no >
- Research projects (TISS-Project-Acronyms ONLY: TISS->Research->My projects: pick from "Acronym" column (only project leaders can access this information)):
- < e.g. WigEE >
- < e.g. HPTCAD >
- < e.g. EUMaster4HPC >
- < e.g. EMQPhaseMod >
- TU Wien Core facilities: < TCAD >
- Research areas -- Focal Areas and Fields: (pick from TU Wien Research Matrix's subcategories and assign a percentage share; in total it should add up to 100%.):
- < e.g.: Modeling and Simulation (50%), Nanoelectronics (50%) >
- Invited: < no >
- Reviewed: < yes >
- File attachments:
- Paper as PDF: ** Multi-Scale_Modeling_of_Transistors_Based_on_the_2D_Semiconductor_Bi2O2Se.pdf**
- Proof of invitation as PDF: INVITATION.PDF
- Proof of review as PDF: REVIEW.PDF