Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H)

Talk or Poster (with paper)

• Category (PICK ONE FROM LIST; DO NOT CHANGE OR ADD NEW CATEGORY!): Full-paper Contribution
• Title: Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H)
• Authors:
  • Wilhelmer, Christoph (m, E360)
  • Waldhoer, Dominic (m, E360)
  • Milardovich, Diego (m, E360)
  • Cvitkovich, Lukas (m, E360)
  • Waltl, Michael (m, E360)
  • Grasser, Tibor (m, E360)
• Presenters:
  • Wilhelmer, Christoph (m, E360)
• Conference: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
• Proceedings Title: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
• Proceedings Link: https://ieeexplore.ieee.org/xpl/conhome/10319472/proceeding
• Conference City: Kobe
• Conference Country: Japan
• Conference Dates: Start date 27/09/2023 - End date 29/09/2023
• Conference Format: On-site
• Conference Website: https://sispad2023.jp/
• Start Page: 149
• End Page: 152
• Number of pages: 4
• ISBN: 978-4-86348-803-8
• DOI: 10.23919/SISPAD57422.2023.10319493
• Language: < English >
• Keywords: amorphous silicon nitride, intrinsic charge trapping sites, polaron, flash memory, nonradiative multi-phonon model
• Open access: no
• Research projects (TISS-Project-Acronyms ONLY: TISS->Research->My projects: pick from "Acronym" column (only project leaders can access this information)):
  • SDS
• TU Wien Core facilities: VSC
• Research areas -- Focal Areas and Fields: (pick from TU Wien Research Matrix's subcategories and assign a percentage share; in total it should add up to 100%.):
  • Computational Materials Science (50%), Quantum Modeling and Simulation (50%)
• Invited: no
• Reviewed: no
• File attachments:
  • Paper as PDF: SISPAD_Wilhelmer_final.pdfSISPAD_Wilhelmer_final.pdf