Molecular Dynamics Study of Al Implantation in 4H-SiC

Talk or Poster (with paper)

• Category Full-paper Contribution
• Title: Molecular Dynamics Study of Al Implantation in 4H-SiC
• Authors:
  • Leroch, Sabine (f, E360)
  • Stella, Robert (m, E360)
  • Hössinger, Andreas (m, External)
  • Filipovic, Lado (m, E360)
• Presenters:
  • Stella, Robert (m, E360)
• Conference: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
• Proceedings Title: e.g. Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
• Proceedings Link: https://ieeexplore.ieee.org/xpl/conhome/10319472/proceeding
• Conference City: Kobe
• Conference Country: Japan
• Conference Dates: 27/09/2023 - 29/09/2023
• Conference Format: On-site
• Conference Website: https://sispad2023.jp/
• Start Page: 185
• End Page: 188
• Number of pages: 4
• ISBN: 979-8-3503-1368-0
• DOI: 10.23919/SISPAD57422.2023.10319554
• Language: English
• Keywords: 4H-SiC, Gao-Weber potential, Al-implantation, formation energies of Al in SiC, high-temperature implantation
• Open access: no
• Research projects:
  • ProMod
• TU Wien Core facilities: VSC
• Research areas -- Focal Areas and Fields:
  • Modeling and Simulation (70%), Nanoelectronics (30%)
• Invited: no
• Reviewed: no
• File attachments:
  • Paper as PDF:SISPAD2023_Leroch.pdf
  • Proof of review as PDF:SISPAD2023_Leroch_Acceptance.pdf